Types of Single Event Effects

Single Event Upset: Generally a transient condition in which the output state of a digital device (e.g., a bit-flip in a memory cell or a change of state of an inverter). The state recovers after being rewritten, causing no permanent damage.
Single Event Latchup: Condition characterized by an anomalous high current state, where the current can go from picoamps (10^-12) to amps. If the power is cycled before damage occurs, SEL may only be transient.
Single Event Burnout: Permanent failure due to maintaining a high current state for an extended period of time.
Single Event Gate Rupture: Permanent failure caused by dielectric breakdown in the semiconductor oxide layer.
Single Event Total Dose: Permanent failure caused by a single particle that produces enough ionization or displacement damage in a transistor to permanently degrade its performance. SETD are more significant now because technology advances have led to very small transistor sizes, making it possible for a particle's path to encompass much of an entire transistor.
Single Event Transient: Effects (e.g., current spikes in operational amplifiers) of short time duration that may lead to other effects downstream of the affected site that are longer in duration.