| Radiation environment |
Shielding feasibility |
Typical effects |
| Total ionizing dose |
Some |
- Threshold shifts in CMOS transistors, leading to failure of logic gates
- CMOS field-oxide charge trapping, loss of isolation, excessive power-supply currents
- Power transistor threshold shifts, loss of on/off control
- Gain degradation in bipolar-junction transistors
|
| Neutron or proton flux events |
Some |
- Displacement damage effects
- Gain degradation in bipolar-junction transistors
- Severe degradation of charge-coupled devices, dynamic memory performance
- Damage to photodetectors
|
| Single-event phenomena |
Some |
- Single heavy ion causes ionization "track"
- Temporary logic scramble
- Single bit errors in static memories
- Localized latchup in CMOS integrated circuits
- Gate rupture of power transistors
- Temporary upset of analog devices such as amplifiers
- Burnout of diodes, transistors
- Discharge of capacitors
|
This table shows the main categories of space radiation and indicates the feasibility of shielding each type in a typical satellite. Typical effects on electronics are also described.